The proposed model implements not only the I DS- V GS characteristics but also the I DS- V DS characteristics. The parameters of the NMOSFET and diode used in this proposed model were fitted from TCAD data of the NFBFET, divided into two parts. To solve this problem, we connected a physics-based diode model with an ideal switch in series to the current generator circuit. The previous current generator circuit could implement I DS- V GS characteristics but could not accurately implement I DS- V DS characteristics. For the previous model, the current generator circuit consisted of one ideal switch and one resistor. This circuit implements the charging characteristics of NFBFET, which occur in the channel region. The charge integrator circuit consisted of one N-type metal-oxide-semiconductor field-effect transistor (NMOSFET), one capacitor, and one resistor.

One is a charge integrator circuit and the other is a current generator circuit. The macro-model of the NFBFET is configured into two parts. In this study, we propose an improved macro-model of an N-type feedback field-effect transistor (NFBFET) and compare it with a previous macro-model for circuit simulation.

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